Integrated circuit package and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Yung-Chi Lin, Wen-Chih Chiou
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Abstract
A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.
Claims20
A device package comprising:
- a first semiconductor die;
- a second semiconductor die over and bonded to the first semiconductor die;
- an insulating material surrounding the second semiconductor die;
- and
- a heat dissipation structure over the second semiconductor die and the insulating material, wherein the heat dissipation structure is bonded to the second semiconductor die by one or more insulating bonding layers, and wherein the one or more insulating bonding layers interfaces a surface of the second semiconductor die and a surface of the heat dissipation structure.
A device package comprising:
- a first semiconductor die, the first semiconductor die comprising:
- a first semiconductor substrate;
- and
- conductive vias in the first semiconductor substrate;
- a second semiconductor die over and bonded to the first semiconductor die, wherein the conductive vias are bonded to bond pads of the second semiconductor die by metal-to-metal bonding;
- and
- a second semiconductor substrate over and bonded to the second semiconductor die, wherein the second semiconductor substrate is bonded to the second semiconductor die by dielectric-to-dielectric bonding between a first insulating bonding layer and a second insulating bonding layer.
A device package comprising:
- a first integrated circuit die;
- a second integrated circuit die bonded to the first integrated circuit die;
- an insulating layer surrounding the second integrated circuit die;
- a first conductive bonding structure interfacing the second integrated circuit die and the insulating layer;
- a second conductive bonding structure over and interfacing the first conductive bonding structure;
- and
- a semiconductor substrate over and interfacing the second conductive bonding structure.
Dependencies are inferred from the claim text.