Semiconductor devices and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Sheh HUANG, Yung-Shih CHENG, Jiing-Feng YANG, Yu-Hsiang CHEN, Chii-Ping CHEN
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Abstract
A method includes forming a transistor over a substrate; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure comprises a high resistance (HiR) resistor, and the HiR resistor is made of titanium nitride (TiN) or tantalum nitride (TaN); bonding a carrier substrate to the front-side interconnect structure through a metal-containing material; and forming a backside interconnect structure over a backside of the substrate.
Claims20
A method, comprising:
- forming a transistor over a substrate;
- forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure comprises a high resistance (HiR) resistor, and the HiR resistor is made of titanium nitride (TiN) or tantalum nitride (TaN);
- bonding a carrier substrate to the front-side interconnect structure through a metal-containing material;
- and
- forming a backside interconnect structure over a backside of the substrate.
A method, comprising:
- forming a transistor over a substrate;
- forming a front-side interconnect structure over the transistor;
- forming a thermal conductivity layer spanning over a carrier substrate;
- forming a bonding layer over the thermal conductive layer;
- and
- bonding the bonding layer to the front-side interconnect structure over the transistor through hybrid bonding.
A method, comprising:
- forming a transistor over a substrate forming a front-side interconnect structure over the transistor;
- forming a stack of a first metal-containing layer and a second metal-containing layer over a carrier substrate;
- and
- bonding the carrier substrate to the front-side interconnect structure through the stack of the first metal-containing layer and the second metal-containing layer;
- and
- forming a backside interconnect structure over a backside of the substrate.
Dependencies are inferred from the claim text.