Semiconductor stack, semiconductor device, and method of manufacturing semiconductor device
AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha, MIRISE Technologies Corporation
InventorsKenta WATANABE, Hiroki MIYAKE, Kazuki IKEYAMA, Meguru ENDO
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Abstract
A semiconductor stack includes a nitride semiconductor layer containing a dopant, and a protective layer covering a surface of the nitride semiconductor layer. The protective layer is provided to suppress the dissociation of nitrogen from the nitride semiconductor layer during annealing. The protective layer is formed not to contain oxygen as a constituent element, and has higher oxygen barrier property than an aluminum nitride layer, to restrict action of oxygen on the surface of the nitride semiconductor layer.
Claims16
A semiconductor stack comprising:
- a nitride semiconductor layer containing a dopant;
- and
- a protective layer covering a surface of the nitride semiconductor layer, wherein
- the protective layer is formed not to contain oxygen as a constituent element, and
- the protective layer has an oxygen barrier property higher than that of an aluminum nitride layer, to restrict an action of oxygen on the surface of the nitride semiconductor layer.
A semiconductor stack comprising:
- a nitride semiconductor layer containing a dopant;
- and
- a protective layer covering the nitride semiconductor layer, wherein
- the nitride semiconductor layer is made of gallium nitride or aluminum gallium nitride, and
- the protective layer is made of:
- i) a gallium nitride layer;
- or
- ii) a carbon film and a cap layer stacked on the carbon film, wherein the cap layer is made of a compound semiconductor material.
A semiconductor device comprising:
- a semiconductor layer including a nitride semiconductor;
- and
- an electrode formed on a surface of the semiconductor layer, wherein a surface roughness Ra of the surface is 5 nm or less.
A method of manufacturing a semiconductor device comprising:
- forming a protective layer to cover a surface of a nitride semiconductor layer into which a dopant is ion-implanted;
- and
- annealing the nitride semiconductor layer by heat treatment while protected with the protective layer, wherein
- in the forming of the protective layer, the protective layer is formed not to contain oxygen as a constituent element, and to have an oxygen barrier property higher than that of an aluminum nitride layer, to restrict an action of oxygen on the surface of the nitride semiconductor layer.
Dependencies are inferred from the claim text.