US 2026/0136700 A1Published application

Back contact solar cell and method for preparing same

AssigneeChint New Energy Technology Co., Ltd.

InventorsSheng HE, Mingzhang FENG, Wei-chih HSU, Haiyan HUANG

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Abstract

Disclosed is a back contact solar cell. A back surface field region is arranged as a columnar hole structure, such that the thickness of a silicon substrate can be fully utilized to form a bottom region and a column wall back surface field region, the back surface field collecting area is increased without occupying additional back surface area, and the area of a back surface emitting region is maximized. Meanwhile, the back surface field region is deeply arranged into a silicon wafer, so that majority carriers can be collected in the silicon wafer, the transmission and collection distance is shortened, and the collection effect is enhanced. Thus, the structure can enhance the collecting of the minority carriers and the majority carriers, and the efficiency of the cell is overall improved.

Claims20

Dependent claims

A back contact solar cell, wherein the back contact solar cell comprises:

a silicon substrate,
wherein a back surface of the silicon substrate is provided with a columnar hole and a non-columnar hole region;
a doped back surface field layer provided in the columnar hole;
a first electrode provided on the back surface of the silicon substrate, wherein the first electrode is in electrical contact with the doped back surface field layer;
a doped emitter layer provided in the non-columnar hole region, wherein the doped emitter layer comprises a doped polysilicon layer;
and
a second electrode provided on the back surface of the silicon substrate, wherein the second electrode is in electrical contact with the doped polysilicon layer;
wherein the first electrode and the second electrode have opposite polarities and are insulated from each other;
or
wherein the back contact solar cell comprises:
a silicon substrate, wherein the silicon substrate has a first doping type;
wherein a back surface of the silicon substrate is provided with a columnar hole and/or a conical hole and a non-columnar hole region;
a doped back surface field layer provided in the columnar hole, wherein the back surface field layer has the first doping type;
a first electrode provided on the back surface of the silicon substrate, wherein the first electrode is in electrical contact with the doped back surface field layer;
a doped emitter layer provided in the non-columnar hole region, wherein the doped emitter layer comprises a doped polysilicon layer, and the doped polysilicon layer has a second doping type;
and
a second electrode provided on the back surface of the silicon substrate, wherein the second electrode is in electrical contact with the doped polysilicon layer;
wherein the first electrode and the second electrode have opposite polarities and are insulated from each other.

15 more elements

A method for manufacturing a back contact solar cell, comprising following steps:

S1) depositing an intrinsic amorphous silicon layer on a back surface of a silicon substrate;
S2) performing a first doping treatment on the silicon substrate on which the intrinsic amorphous silicon layer is deposited to form a doped polysilicon layer;
S3) printing an acidic corrosive material on the back surface of the silicon substrate on which the doped polysilicon layer is formed, and performing a polishing treatment to form a columnar hole and/or a conical hole;
S4) performing a second doping treatment on the silicon substrate on which the columnar hole and/or conical hole are formed to form a doped back surface field layer;
S5) performing pickling on the silicon substrate on which the doped back surface field layer is formed;
and
S6) preparing a first electrode in electrical contact with the doped back surface field layer and preparing a second electrode in electrical contact with the doped polysilicon layer respectively on the back surface of the silicon substrate after pickling to obtain the back contact solar cell, wherein the first electrode and the second electrode have opposite polarities and are insulated from each other.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 19/121,787Filed 11 Oct 2023
Priority: CN 202310501272.928 Apr 2023
Published: 14 May 2026
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10F 10/165
Comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells: the heterojunctions being Group IV-IV…
H10F 77/147
Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies: shapes of bodies
H10F 71/129
Manufacture or treatment of devices covered by this subclass: passivating
H10F 77/215
For photovoltaic cells: geometries of grid contacts