Semiconductor device and fabricating method thereof

A device, comprising:

• a first switch sharing a first gate structure with a first dummy structure;
• a second switch sharing a second gate structure with a second dummy structure;
• and
• a third switch sharing a third gate structure with a third dummy structure,
• wherein the second gate structure is disposed between the first gate structure and the third gate structure,
• a control terminal of the first switch is coupled to a control terminal of the third switch, and
• the first dummy structure, the second dummy structure, the second switch and the third switch are coupled to each other at a first node.

A method, comprising:

• forming a first gate structure, a second gate structure and a third gate structure arranged in order;
• forming a first conductive segment configured to transmit a first signal to each of the first gate structure and the third gate structure;
• and
• forming a second conductive segment configured to transmit a second signal to the second gate structure,
• wherein the second signal is complementary with the first signal, and
• a distance between the first gate structure and the second gate structure is approximately equal to a distance between the third gate structure and the second gate structure.