Semiconductor device

A semiconductor device comprising:

• a semiconductor chip including
• a substrate,
• a plurality of units arranged in an array direction, each of the plurality of units including a unit FET having a gate electrode, a source electrode, and a drain electrode provided on the substrate, and
• a gate pad to which the gate electrode of each of the plurality of units is electrically connected, the gate pad extending in the array direction and being provided on the substrate;
• an input terminal to which a high-frequency signal is input;
• and
• a matching circuit including a plurality of bonding wires electrically connected between the input terminal and the gate pad, each of the plurality of bonding wires having a first end bonded to a respective one of a plurality of regions arranged in the array direction in the gate pad,
• wherein the plurality of units include a first unit and a second unit, and the first unit is closer to a center of the plurality of units in the array direction than the second unit is,
• wherein the first unit includes a first capacitive element electrically connected between the gate pad and a reference potential, and
• wherein the second unit includes no capacitive element electrically connected between the gate pad and the reference potential, or includes a second capacitive element electrically connected between the gate pad and the reference potential and having a capacitance value smaller than a capacitance value of the first capacitive element.