METHODS OF FORMING EPITAXIAL AlScN RESONATORS WITH SUPERLATTICE STRUCTURES INCLUDING AlGaN INTERLAYERS AND VARIED SCANDIUM CONCENTRATIONS FOR STRESS CONTROL AND RELATED STRUCTURES
AssigneeAkoustis Technologies Corp.
InventorsCraig Moe, Jeffrey M. Leathersich, Jeffrey B. Shealy
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Abstract
A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness, and repeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer.
Claims12
A resonator structure comprising:
- an AlScN/AlGaN superlattice structure having a total thickness;
- a plurality of AlScN layers included the AlScN/AlGaN superlattice each having a first thickness;
- a plurality of AlGaN interlayers layers each having a second thickness, wherein each of the plurality of AlGaN interlayers alternates with a respective one of the plurality of AlScN layers to form the AlScN/AlGaN superlattice;
- and
- wherein the second thickness is substantially less than the first thickness.
A resonator structure comprising:
- an AlScN resonator layer partitioned into a first stage of the AlScN layer having a first concentration of Sc, a second stage of the AlScN layer having a second concentration of Sc that is greater than the first concentration, and a top stage of the AlScN layer a third concentration of Sc that is greater than the first concentration and greater than the second concentration.
Dependencies are inferred from the claim text.