Semiconductor device and writing method

A semiconductor device comprising:

• a memory array circuit configured to include a plurality of data lines, a plurality of memory cells connected to the plurality of data lines, and an input circuit that includes a plurality of storage circuits, is supplied with a high voltage during writing, and writes data to the memory cells according to data held in the storage circuits;
• and
• a memory controller configured to supply a data string having a number of pieces of data corresponding to a number of the storage circuits to the input circuit and cause the plurality of storage circuits to hold the data string,
• wherein inverted data that changes a state of the memory cell by writing to the memory cell and non-inverted data that does not change the state of the memory cell are mixed in the data string, and
• wherein the memory controller
• includes a counter circuit that counts a number of pieces of the inverted data included in the data string, and
• controls the input circuit to divide the plurality of storage circuits that store the data string into a plurality of regions so that the number of storage circuits that store the inverted data is equal to or less than a predetermined number based on counting by the counter circuit, select the plurality of regions at different timings, and simultaneously write data held in the storage circuits arranged in the selected regions.