Microelectronic articles including electroplated metal and methods of making the same

A method of making a microelectronic article, the method comprising:

• depositing at least one redistribution layer on a glass-based substrate, wherein the depositing the at least one redistribution layer comprises at least one cycle of:
• electroplating the glass-based substrate with a metal material to form an electroplated metal material;
• annealing the glass-based substrate and the electroplated metal material at a ramp rate greater than or equal to 0.5° C./min and less than or equal to 10° C./min to a peak temperature greater than or equal to 200° C. and less than or equal to 400° C.;
• and
• disposing a dielectric material at least one of on or between the electroplated metal material,
• wherein the electroplated metal material comprises a hysteresis loop greater than or equal to 10,000 MPa·° C.

A method of making a microelectronic article, the method comprising:

• depositing at least one redistribution layer on a glass-based substrate, wherein the depositing the at least one redistribution layer comprises at least one cycle of:
• electroplating the glass-based substrate with a metal material to form an electroplated metal material, wherein the electroplated metal material has an impurity content of less than or equal to 1000 parts per million by weight (ppmw);
• and
• disposing a dielectric material at least one of on or between the electroplated metal material,
• wherein the electroplated metal material comprises a hysteresis loop greater than or equal to 10,000 MPa·° C.