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US 2026/0132035 A1Published application
SiC VOLUMETRIC SHAPES AND METHODS OF FORMING BOULES
AssigneePallidus, Inc.
InventorsDouglas M. Dukes, Glenn Sandgren, Andrew R. Hopkins, Isabel Burlingham, Mark S. Land
Life of this patent
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Abstract
Volumetric shapes of SiC starting materials for boule growth. Methods of controlling vapor deposition growth of SiC boules, and providing directional flux. Methods of increase the number of wafers, the number of electronic components and the number of operable devices from a single boule growth cycle.
Claims86
A volumetric shape of SiC, the volumetric shape comprising:
- a. about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape having a structural integrity;
- c. a binder, wherein the binder binds the SiC granules, whereby the volumetric shape is capable of maintaining the structural integrity when placed in a vapor deposition apparatus during a growth cycle of a boule;
- d. the volumetric shape defining a void;
- and,
- e. the volumetric shape having a porosity, wherein the volumetric shape has a apparent density of less than 3.0 g/cc.
3 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. About 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape having a structural integrity, wherein the volumetric shape is capable of maintaining the structural integrity when placed in a vapor deposition apparatus during a growth cycle of a boule;
- c. the volumetric shape defining a void;
- and,
- d. the volumetric shape having a porosity, wherein the volumetric shape has an apparent density of less than 3.0 g/cc.
2 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape having a structural integrity;
- c. a binder, wherein the binder binds the SiC granules, whereby the volumetric shape is capable of maintaining the structural integrity when placed in a vapor deposition apparatus during a growth cycle of a boule;
- and,
- d. the volumetric shape defining a void.
2 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape having a structural integrity;
- c. a binder, wherein the binder binds the SiC granules, whereby the volumetric shape is capable of maintaining the structural integrity when placed in a vapor deposition apparatus during a growth cycle of a boule;
- d. the volumetric shape defining a void;
- and,
- e. the volumetric shape having a porosity, wherein the volumetric shape has a apparent density of less than 3.1 g/cc;
- f. wherein the volumetric shape is capable of providing a predetermined flux during the growth cycle of the boule.
4 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape having a structural integrity;
- c. the volumetric shape defining a void;
- and,
- d. the volumetric shape having a porosity, wherein the volumetric shape has an apparent density of less than 3.1 g/cc;
- e. wherein the volumetric shape is capable of providing predetermined flux during the growth cycle.
3 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape having a structural integrity;
- c. a binder, wherein the binder binds the SiC granules, whereby the volumetric shape is capable of maintaining the structural integrity when placed in a vapor deposition apparatus during a growth cycle of a boule;
- and,
- d. wherein the volumetric shape is capable of providing a predetermined flux.
2 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. About 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape;
- c. the volumetric shape having a porosity, wherein the volumetric shape has a apparent density of less than 2.9 g/cc;
- d. wherein the volumetric shape is capable when placed in a vapor deposition apparatus during a growth cycle of a boule of providing a consistent rate of flux formation during the growth cycle.
1 more element
A volumetric shape of SiC, the volumetric shape comprising:
- a. about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric;
- and,
- c. the volumetric shape defining a void;
- d. wherein the volumetric shape is capable when placed in a vapor deposition apparatus during a growth cycle of a boule of providing a consistent rate of flux formation during the growth cycle.
2 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape;
- c. a binder, wherein the binder binds the SiC granules;
- and,
- d. wherein the volumetric shape is capable when placed in a vapor deposition apparatus during a growth cycle of a boule of providing a predetermined rate of flux formation during the growth cycle.
2 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric shape;
- c. a binder, wherein the binder binds the SiC granules, thereby defining the volumetric shape;
- d. the volumetric shape having a porosity, wherein the volumetric shape has a apparent density of less than 2.9 g/cc;
- e. wherein the volumetric shape is capable when placed in a vapor deposition apparatus during a growth cycle of a boule of providing a uniform flux formation during the growth cycle.
2 more elements
A volumetric shape of SiC, the volumetric shape comprising:
- a. about 100 g to about 12,000 g of SiC granules, having a particle size of from about 0.1 μm to about 100 μm,
- b. the SiC granules defining a volumetric;
- and,
- c. the volumetric shape defining a void;
- d. wherein the volumetric shape is capable when placed in a vapor deposition apparatus during a growth cycle of a boule of providing a uniform flux formation during the growth cycle.
2 more elements
A method of growing a SiC boule, the method comprising:
- a. placing a starting material comprising SiC in a vapor deposition apparatus;
- b. heating the starting material to a temperature whereby the SiC sublimates forming a flux comprising species of Si and C;
- c. the flux flowing across an area directly adjacent to the growth face of a boule;
- wherein the area is the same as and coincident with the growth face of the boule;
- d. wherein the flux is predetermined across the entirety of the area;
- and,
- e. depositing the flux on the growth face of the boule to grow the boule in length.
4 more elements
A method of growing a SiC boule, the method comprising:
- a. placing a starting material comprising SiC in a vapor deposition apparatus;
- b. heating the starting material to create a flux and begin a growth cycle;
- c. during the growth cycle flowing the flux across an area directly adjacent to a growth face of a boule;
- d. wherein the flux flow is maintained at a predetermined rate during the growth cycle;
- and,
- e. depositing the flux on the growth face of the boule to grow the boule in length.
3 more elements
A method of growing a SiC boule, the method comprising:
- a. placing a volumetric shape of starting material comprising SiC in a vapor deposition apparatus;
- b. heating the volumetric shape to provide a directional flux during a growth cycle of a boule;
- and,
- c. depositing the directional flux on a growth face of the boule to grow the boule in length.
1 more element
A method of providing a large number of devices from a single growth cycle of a boule, the method comprising:
- a. placing a volumetric shape of starting material comprising SiC in a vapor deposition apparatus;
- b. heating the volumetric shape to provide a directional flux during a growth cycle of a boule;
- and,
- c. depositing the directional flux on a growth face of the boule to grow the boule in length;
- d. converting the boule to provide wafers.
2 more elements
A volumetric shape of a composite material of ultra pure silicon carbide particles and a binder for use in vapor deposition growth of silicon carbide boules, the volumetric shape comprising:
- a. silicon carbide particles, wherein the particles are at least 99.999% pure;
- b. a binder joining the silicon carbide particles together and thereby defining a volumetric shape;
- c. the binder comprising a cross linked polymeric material consisting of carbon and silicon;
- and,
- d. wherein the binder has a volatilization temperature that is between about 300° C. and 700° C.;
- whereby the binder is incapable of interfering with SiC boule growth and incapable of adversely affecting SiC boule quality.
3 more elements
A volumetric shape of a composite material of ultra pure silicon carbide particles and a binder for use in vapor deposition growth of silicon carbide boules, the volumetric shape comprising:
- a. polymer derived silicon carbide particles, having a non-oxide forming surface;
- wherein the particles are at least 99.9999% pure;
- b. a binder joining the silicon carbide particles together and thereby defining a volumetric shape;
- and,
- c. wherein the binder has a volatilization temperature lower than the volatilization temperature of the polymer derived silicon carbide particles;
- whereby the binder is incapable of interfering with SiC boule growth and incapable of adversely affecting SiC boule quality.
3 more elements
A volumetric shape of a composite material of ultra pure silicon carbide particles and a binder for use in vapor deposition growth of silicon carbide boules, the volumetric shape comprising:
- a. silicon carbide particles, wherein the particles are at least 99.999% pure, wherein the particles have a D50 particle size from about 0.1 μm to about 20.0 μm;
- b. a binder joining the silicon carbide particles together and thereby defining a volumetric shape;
- c. the binder comprising a cross linked polymeric material comprising carbon and silicon;
- and,
- d. wherein the binder has a volatilization temperature that is between about 300° C. and 900° C.;
- whereby the binder is incapable of interfering with boule growth and incapable of adversely affecting boule quality.
3 more elements
A volumetric shape of a composite material of ultra pure silicon carbide particles and a binder for use in vapor deposition growth of silicon carbide boules, the volumetric shape comprising:
- a. silicon carbide particles, wherein the particles are at least 99.999% pure, wherein the particles have an average particle size equal to or less than 5 μm and no more than 10% of the particles are larger than 10 μm;
- b. a binder joining the silicon carbide particles together and thereby defining a volumetric shape;
- c. the binder comprising a cross linked polymeric material comprising carbon and silicon;
- and,
- d. wherein the binder has a volatilization temperature that is between about 300° C. and 900° C.;
- whereby the binder is incapable of interfering with boule growth and incapable of adversely affecting boule quality.
3 more elements
A method of growing a boule in a vapor deposition apparatus the method comprising:
- a. placing a volumetric shape of a composite material of ultra pure silicon carbide particles and a binder into a vapor deposition apparatus;
- the volumetric shape comprising:
- i. polymer derived silicon carbide particles, having a non-oxide forming surface;
- wherein the particles are at least 99.9999% pure;
- ii. a binder joining the silicon carbide particles together and thereby defining a volumetric shape;
- iii. the binder comprising silicon, carbon and an additive for providing functionality to a boule;
- iv. wherein the binder has a volatilization temperature at or below the volatilization temperature of the polymer derived silicon carbide particles and the additive has a volatilization temperature at about the volatilization temperature of the polymer derived ceramic SiC particle;
- b. vaporizing the volumetric shape, to form vapors;
- c. depositing the vapors on a substrate to form a boule;
- d. whereby the binder is incapable of providing the boule with any functionality;
- whereby the additive is capable of providing the boule with a predetermined functionality.
8 more elements
Dependencies are inferred from the claim text.