Film formation method and film formation apparatus
AssigneeTokyo Electron Limited
InventorsYumiko KAWANO, Shinichi IKE, Shuji AZUMO
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsYumiko KAWANO, Shinichi IKE, Shuji AZUMO
Estimating the term…
A film formation method includes: preparing a substrate including, on its surface, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; selectively forming a self-assembled monolayer in the first region, among the first region and the second region; and forming a desired target film in the second region, among the first region and the second region, by using the self-assembled monolayer formed in the first region, wherein the selectively forming the self-assembled monolayer includes: selectively forming the self-assembled monolayer in the first region by using a first processing liquid including a first raw material of the self-assembled monolayer; and modifying the self-assembled monolayer, by using a second processing liquid including a second raw material of the self-assembled monolayer at a concentration different from a concentration of the first processing liquid.
A film formation method comprising:
Dependencies are inferred from the claim text.