Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChien-Ting Lin, Chuan-Lan Lin, Chu-Fu Lin
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric ((IMD) layer on the substrate and a first metal interconnection in the first IMD layer, forming a bonding pad on the first IMD layer, forming a passivation layer on the bonding pad, removing part of the passivation layer to expose the bonding pad, performing a chip probing test on the bonding pad, removing the bonding pad to form a recess, forming a dielectric layer to fill the recess completely, and forming a second metal interconnection in the dielectric layer.
Claims16
A method for fabricating a semiconductor device, comprising:
- forming a bonding pad on a substrate;
- forming a passivation layer on part of the bonding pad;
- performing a chip probing test on the bonding pad;
- removing the bonding pad to form a recess;
- and
- forming a dielectric layer in the recess.
A semiconductor device, comprising:
- a substrate having a first region and a second region;
- a first inter-metal dielectric ((IMD) layer on the first region and the second region;
- a first metal interconnection in the first IMD layer of the first region;
- a dielectric layer on the first metal interconnection, wherein the dielectric layer comprises a reverse T-shape;
- and
- a passivation layer on the first IMD layer and around the dielectric layer.
A semiconductor device, comprising:
- a first inter-metal dielectric ((IMD) layer on a substrate;
- a first metal interconnection in the first IMD layer;
- a bonding pad on the first metal interconnection;
- a dielectric layer on the bonding pad;
- and
- a passivation layer around the bonding pad and the dielectric layer.
Dependencies are inferred from the claim text.