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US 2026/0130128 A1Published application
High Critical Temperature Metal Nitride Layer with Oxynitride Seed Layer
AssigneeApplied Materials, Inc.
InventorsZihao YANG, Mingwei ZHU, Shriram MANGIPUDI, Mohammad Kamruzzaman CHOWDHURY, Shane LAVAN, Zhebo CHEN, Yong CAO, Nag B. PATIBANDLA
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Abstract
A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.
Claims17
A superconducting device, comprising:
- a dielectric or semiconductive substrate;
- a metal oxynitride seed layer on the substrate, the seed layer being an oxynitride of a first metal other than niobium;
- and
- a niobium nitride superconductive layer disposed directly on the seed layer and patterned to form a wire.
1 more element
Dependencies are inferred from the claim text.