Layered avalanche detector
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsFrancesco GRAMUGLIA, Eng Huat Toh
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Abstract
An avalanche photodiode device includes a first doped layer having a first doping type, a second doped layer having a second doping type, a third doped layer having the first doping type, a first PN junction between the first doped layer and the second doped layer, a second PN junction between the second doped layer and the third doped layer, a first vertical conductive structure coupled to the first doped layer and the third doped layer, and a second vertical conductive structure coupled to the second doped layer.
Claims20
An avalanche photodiode device comprising:
- a first doped layer having a first doping type;
- a second doped layer having a second doping type;
- a third doped layer having the first doping type;
- a first PN junction between the first doped layer and the second doped layer;
- a second PN junction between the second doped layer and the third doped layer;
- a first vertical conductive structure coupled to the first doped layer and the third doped layer;
- and
- a second vertical conductive structure coupled to the second doped layer.
A photodetector comprising at least one avalanche photodiode device, the at least one avalanche photodiode device comprising:
- a first doped layer having a first doping type;
- a second doped layer having a second doping type;
- a third doped layer having the first doping type;
- a first PN junction between the first doped layer and the second doped layer;
- a second PN junction between the second doped layer and the third doped layer;
- a first vertical conductive structure coupled to the first doped layer and the third doped layer;
- and
- a second vertical conductive structure coupled to the second doped layer.
A method for forming an avalanche photodiode device, the method comprising:
- forming a first doped layer having a first doping type;
- forming a second doped layer having a second doping type;
- forming a third doped layer having the first doping type;
- forming a first vertical conductive structure coupled to the first doped layer and the third doped layer;
- and
- forming a second vertical conductive structure coupled to the second doped layer and the fourth doped layer,
- wherein a first PN junction is located between the first doped layer and the second doped layer, and
- a second PN junction is located between the second doped layer and the third doped layer.
Dependencies are inferred from the claim text.