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US 2026/0129971 A1Published application
Multi-finger semiconductor devices with dummy gate structures
AssigneeGlobalFoundries U.S. Inc.
InventorsKaustubh Shanbhag, Vibhor Jain, Judson Robert Holt, Tamilmani Ethirajan, Teng-Yin Lin
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to multi-finger semiconductor devices with dummy gate structures and methods of manufacture. The structure includes: a plurality of active gate structures over a semiconductor substrate; a shared diffusion region in the semiconductor substrate between adjacent active gate structures of the plurality of gate structures; and a gate structure shorted to the shared diffusion region.
Claims20
A structure comprising:
- a plurality of active gate structures over a semiconductor substrate;
- a shared diffusion region in the semiconductor substrate between adjacent active gate structures of the plurality of gate structures;
- and
- a gate structure shorted to the shared diffusion region.
1 more element
A structure comprising:
- a plurality of active gate structures on a semiconductor substrate, the plurality of active gate structures each including a gate dielectric material and a gate electrode;
- a diffusion region shared amongst adjacent active gate structure of the plurality of gate structures;
- at least one gate structure comprising a gate electrode electrically connecting to the diffusion region;
- and
- contacts connecting to the diffusion region.
2 more elements
A method comprising:
- forming a plurality of active gate structures over a semiconductor substrate;
- forming a shared diffusion region in the semiconductor substrate between adjacent active gate structures of the plurality of gate structures;
- and
- forming a gate structure shorted to the shared diffusion region
1 more element
Dependencies are inferred from the claim text.