Semiconductor device with backside isolation ring for latch-up immunity
AssigneeInternational Business Machines Corporation
InventorsMasoud Zabihi, Ruilong Xie, Robert Gauthier, Anindya Nath, Anthony I-Chih Chou
Life of this patent
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Abstract
A semiconductor device includes a passive device including a first backside contact on a first side of the passive device, a second backside contract on a second side of the passive device, a spacer liner over sidewalls of the first backside contact and the second backside contact, and a shallow trench isolation (STI) above the first backside contact and the second backside contact and partially covering a top surface of the first backside contact and the second backside contact. The spacer liner is configured to prevent carrier transportation from the passive device.
Claims20
A semiconductor device, comprising:
- a passive device, comprising:
- a first backside contact on a first side of the passive device;
- a second backside contact on a second side of the passive device;
- a spacer liner over sidewalls of the first backside contact and the second backside contact;
- and
- a shallow trench isolation (STI) above the first backside contact and the second backside contact and partially covering a top surface of the first backside contact and the second backside contact, wherein the spacer liner is configured to prevent carrier transportation from the passive device.
A method of fabricating a semiconductor device, the method comprising:
- forming a passive device comprising:
- forming a first backside contact;
- forming a second backside contact;
- forming a spacer liner over sidewalls of the first backside contact and the second backside contact;
- and
- forming a shallow trench isolation (STI) above the first backside contact and the second backside contact and partially covering a top surface of the first backside contact and the second backside contact, wherein the spacer liner is configured to prevent carrier transportation from the passive device.
A semiconductor device, comprising:
- a passive device, comprising:
- a first backside contact on a first side of the passive device;
- a second backside contact on a second side of the passive device;
- a first interconnect connecting the first backside contact to a backside power delivery network (BSPDN) on a backside of the passive device;
- a second interconnect connecting the second backside contact to the BSPDN;
- and
- a spacer liner over sidewalls of the first backside contact and the second backside contact, wherein the spacer liner is configured to prevent carrier transportation from the passive device.
Dependencies are inferred from the claim text.