Method for producing a semiconductor laser and semiconductor laser

A method for producing a semiconductor laser, the method comprising:

• providing a semiconductor body having a first region of a first conductivity type, a second region and an active region for producing electromagnetic radiation arranged between the first and the second region;
• forming a mask on the second region;
• forming a hole in the mask so that a surface of the second region is exposed;
• and
• growing a mesa structure of a semiconductor material on the exposed surface of the second region in the hole of the mask,
• wherein the mesa structure is at least partially of a second conductivity type being different from the first conductivity type, and
• wherein a height of the mesa structure is at most 50 nm.

A semiconductor laser comprising:

• a semiconductor body having a first region of a first conductivity type, a second region and an active region configured to generate electromagnetic radiation, the active region arranged between the first and second regions;
• and
• a mesa structure of a semiconductor material grown on the second region, the mesa structure being free of traces of an etching process,
• wherein the mesa structure is at least partially of a second conductivity type different from the first conductivity type, and
• wherein a height of the mesa structure is at most 50 nm.