US 2026/0128260 A1 · PLASMA PROCESSING APPARATUS

Abstract

A plasma processing apparatus includes a plasma processing chamber; a substrate support; a lower electrode; an RF power supply; and an upper electrode assembly. The upper electrode assembly includes a gas diffusion plate; an insulating plate; and an upper electrode plate arranged between the gas diffusion plate and the insulating plate, and having a plurality of first through holes and a plurality of second through holes. The insulating plate includes an inner annular protrusion and an outer annular protrusion protruding downward from a lower surface of the insulating plate, and the insulating plate has a plurality of first gas introduction holes, a plurality of second gas introduction holes, and a plurality of third gas introduction holes.

Claims18

Dependent claims

A plasma processing apparatus, comprising:

a chamber;
a substrate support disposed in the chamber;
an upper electrode assembly disposed above the substrate support;
and
a plasma generator configured to generate a plasma in a space between the substrate support and the upper electrode assembly,
wherein the upper electrode assembly includes an exposed surface exposed to the plasma, and
wherein the exposed surface includes:
an inner annular protrusion and an outer annular protrusion protruding downward;
a plurality of first gas introduction holes formed in the inner annular protrusion;
a plurality of second gas introduction holes formed in the outer annular protrusion;
and
a plurality of third gas introduction holes formed outside the second gas introduction holes.

9 more elements

Dependencies are inferred from the claim text.

Plasma processing apparatus

Life of this patent

Plasma processing apparatus

Life of this patent

Abstract

Claims18