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US 2026/0125825 A1Published application
Gallium nitride single crystal substrate and method of producing same
AssigneeSumitomo Chemical Company, Limited
InventorsTakayuki SUZUKI, Takashi SATO, Toshio KITAMURA, Tetsuji FUJIMOTO
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Abstract
A gallium nitride single crystal substrate in which a low-index crystal plane closest to a principal surface of the substrate is a (0001) plane, wherein resistivity of the substrate at 200° C. is 1×10−2 Ω·cm or lower, and thermal conductivity of the substrate along a thickness direction at 200° C. is 80 W/mk or higher.
Claims6
A gallium nitride single crystal substrate in which a low-index crystal plane closest to a principal surface of the substrate is a (0001) plane,
- wherein resistivity of the substrate at 200° C. is 1×10−2 Ω·cm or lower, and
- thermal conductivity of the substrate along a thickness direction at 200° C. is 80 W/mk or higher.
A method of producing a gallium nitride single crystal substrate, the method comprising:
- (a) preparing a base substrate constituted from a gallium nitride single crystal in which a low-index crystal plane closest to a principal surface of the base substrate is a (0001) plane;
- and
- (b) epitaxially growing a gallium nitride single crystal on the principal surface of the base substrate,
- wherein in (b), under an ammonia-containing atmosphere with a growth pressure greater than 1 atm and 1.5 atm or lower, a source gas for forming the gallium nitride single crystal is supplied onto the base substrate, and concurrently ammonia is supplied from around a support member supporting the base substrate.
1 more element
Dependencies are inferred from the claim text.