Semiconductor device cleaning solution and method for preparing same

Abstract

The present disclosure relates to a semiconductor device cleaning solution comprising a phenol compound at 10 ppb or less and having a ratio of a plasma generation number per pulsed laser irradiation number by a laser-induced breakdown detection method of less than 2%, and relates to a high-purity semiconductor device cleaning solution capable of suppressing the generation of residues on the cleaning target surface during cleaning of the semiconductor devices by effectively controlling phenol compounds that are inevitably generated in the semiconductor device cleaning solution preparation process and a method for preparing the same.

Dependencies are inferred from the claim text.