Method for manufacturing a microelectromechanical system mirror device, manufacturing apparatus, set of mirror devices and wafer

A manufacturing apparatus, comprising:

• a processing chain configured to perform a plurality of processing steps for manufacturing a microelectromechanical system mirror device wherein a mirror portion of the microelectromechanical system mirror device is rotatable about a first axis having an associated first resonance frequency and a second axis different from the first axis and having an associated second resonance frequency, and
• a process control device configure to estimate a deviation of a first geometry parameter of the microelectromechanical system mirror device from a reference value, and to adjust a manufacturing step for the microelectromechanical system mirror device to modify a second geometry parameter of the microelectromechanical system mirror device different from the first geometry parameter such that a variation of a frequency ratio between the associated first resonance frequency and the associated second resonance frequency caused by the deviation of the first geometry parameter and the modifying of the second geometry parameter is below a predefined threshold.

(canceled)

A set of microelectromechanical system mirror devices of a same type, wherein a mirror portion of each microelectromechanical system mirror device of the set of microelectromechanical system mirror devices is rotatable about a respective first axis having an associated first resonance frequency and a respective second axis different from the respective first axis and having an associated second resonance frequency, the set of microelectromechanical system mirror devices comprising a first mirror device and a second mirror device,

• wherein a first geometry parameter of the first mirror device differs from the first geometry parameter of the second mirror device by a first difference,
• wherein a second geometry parameter of the first mirror device differs from the second geometry parameter of the second mirror device by a second difference,
• wherein a difference between a first ratio between the associated first and the associated second resonance frequencies of the first mirror device and a second ratio of the associated first and the associated second resonance frequencies of the second mirror device caused by the first difference alone is above 1% and is compensated by the second difference to be below 1%.