Method for determining debonding parameter value and debonding method using debonding parameter value

A method for determining a parameter value to be used in a debonding tool, comprising:

• assigning an initial test value to a first debonding parameter, the initial test value being in a range between a first end value and a second end value;
• performing a first debonding process for debonding a first carrier wafer from a control wafer using the first debonding parameter with the initial test value;
• determining whether the first debonding process meets a first criterion;
• determining, when it is determined that the first debonding process meets the first criterion, whether a crystal phase of a temperature sensitive layer located between the first carrier wafer and the control wafer is changed;
• and
• determining, when it is determined that the crystal phase of the temperature sensitive layer is not changed, a current value of the first debonding parameter as a value of a second debonding parameter for a second debonding process.

A method for determining a parameter value to be used in a debonding tool, comprising:

• providing a bonded structure that includes
• a carrier wafer,
• a control wafer,
• a debonding structure disposed between the carrier wafer and the control wafer,
• a first bonding layer disposed between the debonding structure and the control wafer,
• a second bonding layer disposed between the first bonding layer and the control wafer, and
• a temperature sensitive layer disposed between the debonding structure and the first bonding layer or between the second bonding layer and the control wafer;
• performing a debonding process for debonding the carrier wafer from the control wafer in the bonded structure using a debonding parameter having an initial test value that is in a range between a first end value and a second end value;
• determining whether the debonding process meets a criterion, the criterion including the carrier wafer is separated from the control wafer via the debonding structure;
• determining, when it is determined that the debonding process meets the criterion, whether a crystal phase of the temperature sensitive layer is changed;
• and
• determining, when it is determined that the crystal phase of the temperature sensitive layer is not changed, a current value of the debonding parameter as a value of another debonding parameter for another debonding process.