Fabrication methods of semiconductor substrates
AssigneeVanguard International Semiconductor Corporation
InventorsRAKESH CHAND, Muniandy Shunmugam, Ramachandramurthy Pradeep Yelehanka
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Abstract
A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. The polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer.
Claims10
A method of fabricating a semiconductor substrate, comprising:
- providing a first wafer;
- etching a first surface of the first wafer to form a plurality of cavities;
- forming a second wafer on the first surface, wherein forming the second wafer comprises:
- providing a core substrate;
- forming a first insulating layer on the core substrate;
- and
- depositing a polysilicon layer on the first insulating layer and the core substrate;
- and
- bonding the polysilicon layer with the first wafer to cover the plurality of cavities, wherein the polysilicon layer is disposed between the first insulating layer and the first wafer.
Dependencies are inferred from the claim text.