Light-emitting device with aligned central electrode and output aperture

A light-emitting element comprising:

• a semiconductor light-emitting diode (LED) that includes a p-doped semiconductor layer, an n-doped semiconductor layer, and an active, light-emitting layer between the p-doped and n-doped layers, the LED being arranged for emitting light at a nominal emission vacuum wavelength λ0 resulting from radiative recombination of charge carriers at the active layer, the LED having (i) a light-exit surface of the n-doped layer opposite the active layer, (ii) an anode contact surface of the p-doped layer opposite the active layer, and (iii) side surfaces that laterally confine the entire p-doped layer, the entire active layer, and at least a portion of the n-doped layer, the active layer extending to the side surfaces;
• an anode electrical contact electrically coupled to the p-doped layer on a central area of the anode contact surface leaving peripheral portions of the anode contact surface without direct electrical coupling to the anode electrical contact;
• a cathode electrical contact electrically coupled to the n-doped layer;
• a reflective or scattering layer on peripheral portions of the light-exit surface and having a central opening therethrough, at least a portion of the central opening being positioned opposite at least a portion of the central area of the anode contact surface;
• and
• one or both of (i) a back set of multiple nanostructured optical elements positioned at the anode contact surface or on or within an electrically insulating back dielectric layer on the peripheral portions of the anode contact surface that lack direct electrical coupling to the anode electrical contact, or (ii) a front set of multiple nanostructured optical elements positioned at the light-exit surface, on or within an electrically insulating front dielectric layer on the light-exit surface, or on or within the reflective or scattering layer.