US 2026/0122978 A1 · SEMICONDUCTOR DEVICES WITH STRESSOR ELEMENTS

Abstract

Semiconductor devices and fabrication methods thereof are described. For example, a semiconductor device includes a semiconductor layer, a first source region, a first drain region, a second source region and a second drain region disposed in the semiconductor layer, a gate electrode disposed above the semiconductor layer and surrounding the first source region, the first drain region, the second source region and the second drain region, and a stressor embedded in the semiconductor layer adjacent to the first drain region, the first source region, the second drain region and the second source region. The first source region and the first drain region, and the second source region and the second drain region are aligned with one another in a first direction. The first source region and the second drain region, and the second source region and the first drain region are aligned with one another in a second direction.

Claims20

Dependent claims

A semiconductor device, comprising:

a semiconductor layer;
a first source region disposed in the semiconductor layer;
a first drain region disposed in the semiconductor layer;
a second source region disposed in the semiconductor layer;
a second drain region disposed in the semiconductor layer;
a gate electrode disposed above the semiconductor layer and surrounding the first source region, the first drain region, the second source region and the second drain region;
and
a stressor embedded in the semiconductor layer, the stressor being adjacent to the first drain region, the first source region, the second drain region and the second source region;
wherein the first source region and the first drain region are aligned with one another in a first direction, and wherein the second source region and the second drain region are aligned with one another in the first direction;
and
wherein the first source region and the second drain region are aligned with one another in a second direction, and wherein the second source region and the first drain region are aligned with one another in the second direction.

8 more elements

A semiconductor device, comprising:

a semiconductor layer;
a first source region disposed in the semiconductor layer;
a first drain region disposed in the semiconductor layer;
a second source region disposed in the semiconductor layer;
a second drain region disposed in the semiconductor layer;
a gate electrode disposed above the semiconductor layer and surrounding the first source region, the first drain region, the second source region and the second drain region;
and
one or more stressors, each of the one or more stressors being embedded in or disposed over at least one of the first source region, the first drain region, the second source region and the second drain region;
wherein the first source region and the first drain region are aligned with one another in a first direction, and wherein the second source region and the second drain region are aligned with one another in the first direction;
and
wherein the first source region and the second drain region are aligned with one another in a second direction, and wherein the second source region and the first drain region are aligned with one another in the second direction.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor devices with stressor elements

Life of this patent

Semiconductor devices with stressor elements

Life of this patent

Abstract

Claims20