Method and semiconductor device
AssigneeHitachi Energy Ltd
InventorsGiovanni ALFIERI, Gianpaolo ROMANO, Andrei MIHAILA, Yulieth Cristina ARANGO, Moritz WEHRLE
Life of this patent
Estimating the term…
Abstract
A method for producing a semiconductor device comprises providing a semiconductor body which is based on a group IV-semiconductor material, doping a first region in the semiconductor body, the first region is of a first conductivity type and starts from a surface of the semiconductor body, and forming a recess in the semiconductor body by selectively and wet-chemically etching the first region.
Claims13
A method for producing a semiconductor device which is one of a metal-insulator-semiconductor field-effect transistor, MISFET, a metal-oxide-semiconductor field-effect transistor, MOSFET, an insulated-gate bipolar transistor, IGBT or a reverse-conducting insulated-gate bipolar transistor, RC-IGBT, comprising:
- A) providing a semiconductor body which is based on a group IV-semiconductor material,
- B) doping a first region in the semiconductor body, the first region is of a first conductivity type and starts from a surface of the semiconductor body, and
- C) forming a recess in the semiconductor body by selectively and wet-chemically etching the first region by means of electrochemical etching, ECE,
- wherein after the recess is formed, the method further comprises:
- applying an electrically insulating film onto walls of the recess, and
- providing a gate electrode in the recess.
13-15. (canceled)
Dependencies are inferred from the claim text.