Semiconductor device and manufacturing method thereof

A semiconductor device, comprising:

• a semiconductor body extending along a first direction;
• a capacitor located on a side of the semiconductor body in the first direction and comprising a first electrode extending along the first direction;
• a first connection structure extending to the first electrode along the first direction and comprising a body portion and an adhesive layer, wherein the adhesive layer covers an end of the body portion close to the semiconductor body and part of a side surface of the body portion;
• and
• an insulation structure located between the first electrode and the adhesive layer in the first direction.

A manufacturing method of a semiconductor device, comprising:

• forming an isolation layer on a side of a semiconductor body in a first direction, wherein the semiconductor body extends along the first direction;
• forming a hole extending through the isolation layer to the semiconductor body;
• forming a first connection structure in the hole;
• etching back the first connection structure and the isolation layer to obtain a groove surrounding a part of the first connection structure away from the semiconductor body;
• forming an insulation structure in the groove;
• and
• forming a capacitor on a side of the first connection structure away from the semiconductor body.