Insulated metal substrate and method for producing an insulated metal substrate
AssigneeHitachi Energy Ltd
InventorsLluis SANTOLARIA, David GUILLON, Dominik TRUESSEL, Georg SIROKY
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Abstract
An insulated metal substrate (1) for a power semiconductor device is specified, comprising —a metal base (2), —a dielectric layer (3) arranged on the metal base (2), —an electrically conductive layer (4) arranged on the dielectric layer (3), and —a reinforcement structure (5), wherein —the reinforcement structure (5) is arranged in a peripheral region of the insulated metal substrate (1) at least partially surrounding a central region of the insulated metal substrate (1). Furthermore, a method for producing an insulated metal substrate is specified.
Claims15
An insulated metal substrate for a power semiconductor device comprising:
- a metal base;
- a dielectric layer arranged on the metal base;
- an electrically conductive layer arranged on the dielectric layer;
- and
- a reinforcement structure, wherein
- the reinforcement structure is arranged in a peripheral region of the insulated metal substrate at least partially surrounds a central region of the insulated metal substrate,
- the reinforcement structure does not protrude beyond the metal base in lateral directions, and
- the reinforcement structure consists of a metal.
(canceled)
A method for producing an insulated metal substrate for a power semiconductor device, the method comprising:
- providing a metal base;
- providing a dielectric layer, which is arranged on the metal base;
- providing an electrically conductive layer, which is arranged on the dielectric layer;
- and
- providing a reinforcement structure, wherein
- the reinforcement structure is provided in a peripheral region of the insulated metal substrate,
- the reinforcement structure does not protrude beyond the metal base in lateral directions, and
- the reinforcement structure consists of a metal.
Dependencies are inferred from the claim text.