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US 2026/0121402 A1Published application
Esd protection circuit
AssigneeSTMicroelectronics International N.V.
InventorPhilippe GALY
Life of this patent
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Abstract
An electrostatic discharge protection circuit incudes an electrostatic discharge dissipation component having a first conduction terminal, a second conduction terminal, and a control terminal. Identical first and second devices each include first and second conduction terminals, where the respective first conduction terminals of the first and second devices are connected to the control terminal of the electrostatic discharge dissipation component, and the respective second terminals of the first and second devices are respectively connected to the first conduction terminal of the electrostatic discharge dissipation component and to the second conduction terminal of the electrostatic discharge dissipation component.
Claims22
An electrostatic discharge protection circuit, comprising:
- an electrostatic discharge dissipation component comprising a first conduction terminal, a second conduction terminal, and a control terminal for controlling a conduction state of the electrostatic discharge dissipation component between its first and second conduction terminals;
- wherein the electrostatic discharge dissipation component is one of:
- a MOS transistor, a BiMOS transistor, and a circuit functionally equivalent to a BiMOS transistor;
- and
- identical first and second devices each comprising first and second conduction terminals, the respective first conduction terminals of the first and second devices being connected to the control terminal of the electrostatic discharge dissipation component, the second conduction terminal of the first device being connected to the first conduction terminal of the electrostatic discharge dissipation component, and the second conduction terminal of the second device being connected to the second conduction terminal of the electrostatic discharge dissipation component.
2 more elements
An electrostatic discharge protection circuit, comprising:
- an electrostatic discharge dissipation component comprising a first conduction terminal, a second conduction terminal, and a control terminal for controlling a conduction state of the electrostatic discharge dissipation component between its first and second conduction terminals;
- wherein the electrostatic discharge dissipation component is a MOS transistor;
- and
- identical first and second devices each comprising first and second conduction terminals, the respective first conduction terminals of the first and second devices being connected to the control terminal of the electrostatic discharge dissipation component, the second conduction terminal of the first device being connected to the first conduction terminal of the electrostatic discharge dissipation component, and the second conduction terminal of the second device being connected to the second conduction terminal of the electrostatic discharge dissipation component;
- wherein each of the first and second devices comprises no BiMOS transistors and are functionally equivalent to a BiMOS transistor;
- wherein the first and second terminals of the electrostatic discharge dissipation component are functionally equivalent respectively to first and second conduction terminals of said BiMOS transistor, and the control terminal of the electrostatic discharge dissipation component is functionally equivalent to a gate of said BiMOS transistor;
- and
- wherein each of the first and second devices comprises:
- a gated diode having a first electrode connected to the first conduction terminal of said device, a second electrode connected to the second conduction terminal of said device, and a gate connected to its second conduction electrode.
6 more elements
An electrostatic discharge protection circuit, comprising:
- an electrostatic discharge dissipation component comprising a first conduction terminal, a second conduction terminal, and a control terminal for controlling a conduction state of the electrostatic discharge dissipation component between its first and second conduction terminals;
- wherein the electrostatic discharge dissipation component is a MOS transistor;
- and
- identical first and second devices each comprising first and second conduction terminals, the respective first conduction terminals of the first and second devices being connected to the control terminal of the electrostatic discharge dissipation component, the second conduction terminal of the first device being connected to the first conduction terminal of the electrostatic discharge dissipation component, and the second conduction terminal of the second device being connected to the second conduction terminal of the electrostatic discharge dissipation component;
- wherein each of the first and second devices comprises no BiMOS transistors and are functionally equivalent to a BiMOS transistor;
- wherein the first and second terminals of the electrostatic discharge dissipation component are functionally equivalent respectively to first and second conduction terminals of said BiMOS transistor, and the control terminal of the electrostatic discharge dissipation component is functionally equivalent to a gate of said BiMOS transistor;
- and
- wherein each of the first and second devices comprises:
- a MOS transistor having a conduction terminal connected to the first conduction terminal of said device, another conduction terminal connected to the second conduction terminal of said device, and a gate connected to one of the first conduction terminal or second confuction terminal of said device.
6 more elements
An electrostatic discharge protection circuit, comprising:
- an electrostatic discharge dissipation component comprising a first conduction terminal, a second conduction terminal, and a control terminal for controlling a conduction state of the electrostatic discharge dissipation component between its first and second conduction terminals;
- wherein the electrostatic discharge dissipation component is a MOS transistor;
- and
- identical first and second devices each comprising first and second conduction terminals, the respective first conduction terminals of the first and second devices being connected to the control terminal of the electrostatic discharge dissipation component, the second conduction terminal of the first device being connected to the first conduction terminal of the electrostatic discharge dissipation component, and the second conduction terminal of the second device being connected to the second conduction terminal of the electrostatic discharge dissipation component;
- wherein each of the first and second devices comprises no BiMOS transistors and are functionally equivalent to a BiMOS transistor;
- wherein the first and second terminals of the electrostatic discharge dissipation component are functionally equivalent respectively to first and second conduction terminals of said BiMOS transistor, and the control terminal of the electrostatic discharge dissipation component is functionally equivalent to a gate of said BiMOS transistor;
- and
- wherein each of the first and second devices comprises:
- a first MOS transistor having a gate, a first conduction terminal connected to the first conduction terminal of said device, a second conduction terminal connected to the second conduction terminal of said device;
- and
- a second MOS transistor having a first conduction terminal connected to the second conduction terminal of said device, a second conduction terminal connected to the gate of the first MOS transistor, and a gate connected to the second conduction terminal of said device.
8 more elements
Dependencies are inferred from the claim text.