Semiconductor laser element

A semiconductor laser element comprising:

• a semiconductor layered portion comprising:
• a first semiconductor layer portion comprising a first conductivity-type semiconductor layer,
• a second semiconductor layer portion comprising a second conductivity-type semiconductor layer, and
• an active layer disposed between the first semiconductor layer portion and the second semiconductor layer portion;
• a ridge located in the semiconductor layered portion;
• and
• a diffraction grating;
• wherein:
• one end surface of the semiconductor laser element serves as a light-emitting surface;
• the ridge comprises:
• a first ridge extending in a first direction in a top view, and
• a second ridge comprising a first protective film located on the semiconductor layered portion, the second ridge located at a side of the light-emitting surface in a top view;
• the diffraction grating has a periodic structure alternately comprising a part of the second semiconductor layer portion and a part of the first protective film, and is located between the second semiconductor layer portion and the first protective film in the second ridge;
• and
• the first protective film is located such that, in a top view, an outer periphery of the first protective film excluding the side of the light-emitting surface and a boundary between the first ridge and the second ridge is located between an outer periphery of the second ridge and an outer periphery of the diffraction grating.