Memory fault processing method and apparatus, electronic device, and readable storage medium
AssigneeHuawei Technologies Co., Ltd.
InventorsFeilong Lin, Kunlin Yang
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AssigneeHuawei Technologies Co., Ltd.
InventorsFeilong Lin, Kunlin Yang
Estimating the term…
This application provides a memory fault processing method: a faulty first storage cell is determined, the first storage cell is isolated, a pressure test is performed on the first storage cell to obtain a fault level of the first storage cell, and a corresponding operation is performed on the first storage cell based on the fault level of the first storage cell, where when the fault level of the first storage cell indicates that the first storage cell is at a first risk level, the operation performed on the first storage cell includes de-isolating the first storage cell. After a faulty storage cell is isolated, a pressure test may be performed on the storage cell to obtain a real fault level of the storage cell. When the fault level of the first storage cell is the first risk level, the first storage cell may continue to be used.
A memory fault processing method, applied to an electronic device, wherein the method comprises:
An electronic device, comprising a processor and a memory, wherein
A computer-readable storage medium, wherein the computer-readable storage medium stores a computer program or instructions, and when the computer program or the instructions are run, a memory fault processing method is implemented, wherein the method comprises:
Dependencies are inferred from the claim text.