Self-excitation lithography method with self-alignment effect

A self-excitation lithography method with a self-alignment effect, comprising:

• providing a to-be-processed structure, wherein the to-be-processed structure comprises a substrate and a first photoresist layer arranged at a side of the substrate;
• performing first lithography processing and pattern transfer processing on the first photoresist layer based on a first mask to form a plurality of groove structures and at least one protruding structure on a surface of the substrate, wherein each protruding structure is provided between every two adjacent groove structures of the plurality of groove structures;
• forming a film layer and a first metal layer sequentially on the plurality of groove structures and the at least one protruding structure, wherein a height of the film layer on the plurality of groove structures is smaller than a height of the film layer on the protruding structure, and a height of the first metal layer on the plurality of groove structures is smaller than a height of the first metal layer on the protruding structure;
• forming a second photoresist layer on a side of the first metal layer away from the substrate, wherein a side of the second photoresist layer away from the substrate is parallel to a plane on which the substrate is located;
• forming a second metal layer on the side of the second photoresist layer away from the substrate, wherein a side of the second metal layer away from the substrate is parallel to the plane on which the substrate is located, and the first metal layer and the second metal layer are both material layers having a negative refractive index;
• determining a wavelength of collimated light having interference properties, performing simulation and optimization on thicknesses of film layers and a width of the protruding structure based on the wavelength of the collimated light, performing second lithography processing by using the collimated light to irradiate from the side of the second metal layer away from the substrate to perform a self-excitation selective-lithography on the second photoresist layer formed on the protruding structure, so as to form a target pattern;
• and
• transferring the target pattern onto the substrate.