Back side power delivery for wafer-scale integration with laser assisted bonding

An apparatus for power delivery comprising:

• a wafer-scale integration interposer (WSII), wherein a front side of the WSII is bonded to a plurality of chiplets, wherein the WSII includes a plurality of through-silicon vias (TSVs);
• a plurality of modular power substrates (MPSs), wherein the plurality of MPSs is bonded to a back side of the WSII, wherein the bonding is accomplished via laser-assisted bonding (LAB);
• and
• a plurality of DC-to-DC power converters, wherein the plurality of DC-to-DC power converters is coupled electrically to the plurality of MPSs, and wherein the plurality of DC-to-DC power converters sends power to the plurality of chiplets bonded to the WSII based on the plurality of MPSs and the plurality of TSVs.

A system for power delivery comprising:

• a wafer-scale integration interposer (WSII), wherein a front side of the WSII is bonded to a plurality of chiplets, wherein the WSII includes a plurality of through-silicon vias (TSVs);
• a plurality of modular power substrates (MPSs), wherein the plurality of MPSs is bonded to a back side of the WSII, wherein the bonding is accomplished via laser-assisted bonding (LAB);
• and
• a plurality of DC-to-DC power converters, wherein the plurality of DC-to-DC power converters is coupled electrically to the plurality of MPSs, wherein the system, when provided DC power, is configured to:
• send DC power, by the plurality of DC-to-DC power converters, to the plurality of chiplets, wherein the sending is based on the plurality of MPSs and the plurality of TSVs.