Annular nozzle and substrate processing device

A substrate processing device, comprising:

• a reaction chamber, comprising an upper chamber and a lower chamber in communication with each other;
• a susceptor, provided in the lower chamber, wherein the susceptor is configured to support a substrate to be processed;
• an annular nozzle, provided in the upper chamber;
• and
• a gas intake assembly, configured to introduce process gas;
• wherein the annular nozzle comprises:
• an annular sleeve, comprising an outer cylinder, an inner cylinder, and an end plate;
• wherein the inner cylinder is provided inside the outer cylinder, an annular space is formed between the outer cylinder and the inner cylinder, the end plate is provided at one end of the outer cylinder and the inner cylinder, and the end plate connects the outer cylinder and the inner cylinder;
• and at least two diffusion plates provided in the annular space, sequentially spaced apart in a direction away from the end plate;
• wherein a diffusion plate closest to the end plate is referred to as a first diffusion plate;
• the annular sleeve is provided with a gas inlet hole, and the gas inlet hole is located on a side of the first diffusion plate close to the end plate;
• each diffusion plate is provided with a plurality of exhaust holes surrounding the inner cylinder;
• and for any two adjacent diffusion plates, the plurality of exhaust holes are provided in a staggered manner, and a number of the plurality of exhaust holes on each diffusion plate increases sequentially in the direction away from the end plate;
• a diffusion plate farthest from the end plate is referred to a Nth diffusion plate, and the Nth diffusion plate is located on a side of the first diffusion plate closer to the susceptor;
• and
• the gas intake assembly is connected to the gas inlet hole of the annular nozzle.