Method for manufacturing semiconductor device, grayscale mask, and semiconductor device

A grayscale mask suitable for an exposure process of a semiconductor device, the grayscale mask comprising:

• a first mask having a light-shielding region and two light-transmitting regions located at two sides of the light-shielding region;
• and
• a second mask optically stacked with the first mask;
• wherein the second mask has a first light filtering region and a second light filtering region respectively aligned with the two light-transmitting regions;
• wherein the first light filtering region and the second light filtering region have different light transmittances.

A semiconductor device comprising:

• a substrate;
• an etched microstructure including a first etched microstructure and a second etched microstructure that are respectively disposed on the substrate and spaced apart from each other;
• and
• a light-shielding pattern disposed between the first etched microstructure and the second etched microstructure;
• wherein a height of the first etched microstructure is different from a height of the second etched microstructure and is less than or equal to a height of the light-shielding pattern.