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US 2026/0113997 A1Published application
Semiconductor structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShao-Ming YU, Wei-Sheng YUN, YunYan CHUNG, Tung Ying LEE, Chao-Ching CHENG
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Abstract
A method includes forming an etch stop layer over a substrate; forming a stack of alternating channel layers and sacrificial layers over the etch stop layer; etching the stack, until the etch stop layer is exposed, to form a fin-shaped structure; forming a source/drain features opposite sides of the stack; removing the sacrificial layers to release the channel layers; forming a gate structure to wrap around each of the channel layers.
Claims20
A method, comprising:
- forming an etch stop layer over a substrate;
- forming a stack of alternating channel layers and sacrificial layers over the etch stop layer;
- etching the stack, until the etch stop layer is exposed, to form a fin-shaped structure;
- forming a source/drain features opposite sides of the stack;
- removing the sacrificial layers to release the channel layers;
- and
- forming a gate structure to wrap around each of the channel layers.
4 more elements
A method, comprising:
- forming a metal oxide layer over a substrate;
- forming a first fin-shaped structure over the metal oxide layer, the first fin-shaped structure comprising a first stack of alternating first dielectric layers and first two-dimension material layers;
- forming source/drain terminals on either side of the first two-dimension material layers;
- performing an etching process, using a fluoride-containing precursor, to remove the first dielectric layers;
- and
- forming a gate structure to wrap around each of the first two-dimension material layers.
3 more elements
A semiconductor structure, comprising:
- a two-dimension material channel layer over a substrate;
- a gate structure wrapping around the two-dimension material channel layer;
- a plurality of source/drain patterns at opposite sides of the gate structure;
- and
- a high-k dielectric layer between the substrate and the gate structure, and between the substrate and the source/drain patterns.
2 more elements
Dependencies are inferred from the claim text.