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US 2026/0112531 A1Published application
Wafer-Bonded Inductors for Power Systems
AssigneeNortheastern University
InventorsVincent HARRIS, Parisa ANDALIB
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Abstract
Wafer-bonded inductors, transformers, and related electronic components can be used in power electronics and provide low conduction loss in the MHz-GHz frequency range. The wafer bonding fabrication process and its thermal requirements offer relatively simple and low cost manufacturing. The resulting devices offer a unique combination of high power handling at high frequencies and small form factor.
Claims21
A wafer-bonded inductor, comprising:
- (i) a non-magnetic substrate;
- (ii) two or more magnetic layers disposed as a stack on the substrate;
- (iii) a three dimensional metallic coil structure disposed within the stack;
- and
- (iv) a first contacts electrically connected to a first end of the coil structure and a second contact electrically connected to a second end of the coil structure.
2 more elements
-23. (canceled)
A method of fabricating a wafer-bonded inductor, the method comprising the steps of:
- (a) providing a non-magnetic substrate, a plurality of tiles, the tiles comprising or consisting of a magnetic material, a conductive metal, and optionally an interface material;
- (b) bonding a first of said tiles to the substrate;
- (c) depositing the conductive metal to form a first patterned metallization layer on a surface of the first tile opposite the substrate;
- (d) optionally applying the interface material to coat the first tile and first patterned metallization layer;
- (e) forming vias in a second of said tiles according to pattern suitable for alignment with selected structures of the first patterned metallization layer;
- (f) bonding the second tile to the first tile, whereby the vias align with said selected structures;
- (g) depositing the conductive metal on a surface of the second tile opposite the first metallization layer, whereby the metal fills the vias, forms a second patterned metallization layer, and forms a continuous conductive pathway between the first metallization layer and the second metallization layer;
- (h) repeating steps (d)-(g) to deposit a third and optionally further tiles, vias, and metallization layers, thereby forming a stack of magnetic material tiles and a three-dimensional coil structure embedded within the stack of magnetic material tiles, with first and second exposed electrical contacts electrically connected with first and second ends of the coil structure.
5 more elements
(canceled)
Dependencies are inferred from the claim text.