Method and system for enhancing lifespan of a nand flash memory

An apparatus for operating a NAND flash memory of a host device, the NAND flash memory having a plurality of NAND blocks configured to perform a read/write operation, the apparatus comprising:

• a processing unit configured to:
• detect a failure of a first NAND block among the plurality of NAND blocks;
• in response to detecting the failure of the first NAND block, determine a failure verification parameter of the first NAND block, wherein the failure verification parameter comprises at least one of a junction temperature of the first NAND block, one or more voltage levels of the first NAND block, and an ON/OFF cell count of the first NAND block;
• assign the first NAND block to a temporary bad block (TBB) list based on the failure verification parameter and a number of a set of the plurality of NAND blocks assigned to the TBB list;
• determine that the NAND flash memory has failed in response to the number of the set of NAND blocks assigned to the TBB list being greater than or equal to a threshold NAND block number.

A method of operating a NAND flash memory of a host device, the NAND flash memory having a plurality of NAND blocks configured to perform a read/write operation, the method comprising:

• determining whether a number of read/write operation failures is greater than a threshold failure number;
• detecting a failure of a first NAND block among a plurality of NAND blocks in response to a determination that the number of read/write operation failures is greater than the threshold failure number, wherein the failure is one of a program failure, an erase failure, or an uncorrectable error correction code;
• in response to detecting the failure of the first NAND block, determining a failure verification parameter of the first NAND block, wherein the failure verification parameter comprises at least one of a junction temperature of the first NAND block, one or more voltage levels of the first NAND block, or an ON/OFF cell count of the first NAND block;
• determining whether the failure verification parameter corresponds to a temporary failure condition;
• determining whether a number of a set of the plurality of NAND blocks assigned to a temporary bad block (TBB) list is less than a threshold NAND block number;
• and
• assigning the first NAND block to the TBB list in response to a determination that the failure verification parameter corresponds to the temporary failure condition and in response to a determination that the number of the set of the plurality of NAND blocks assigned to the TBB list is less than the threshold NAND block number.