# US 2026/0107710 A1 · Boron catalyzed dielectric film depositions

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- Number: US 2026/0107710 A1
- Document ID: US20260107710A1
- Status: Published application
- Kind: A1
- Application number: 18/916,353
- Filed: 2024-10-15
- Published: 2026-04-16
- Earliest claimed: 2024-10-15
- Applicants: Applied Materials, Inc.
- Inventors: Lakmal C. KALUTARAGE; Mark J. SALY; Bhaskar Jyoti BHUYAN; Lisa J. ENMAN; SeyedMahmoud HOSSEINI; Arkaprava DAN; Chi-Chou LIN
- Web page: https://patentgrep.com/patent/US20260107710A1

## CPC

- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- C23C 16/30: Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C 16/401: {containing silicon}
- C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines}
- C23C 16/45529: {specially adapted for making a layer stack of alternating different compositions or gradient compositions}
- C23C 16/45531: {specially adapted for making ternary or higher compositions}
- C23C 16/45542: {Plasma being used non-continuously during the ALD reactions}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 16/5096: {Flat-bed apparatus}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

The present disclosure provides methods of depositing dielectric films in processing chambers. The methods include disposing a substrate on a susceptor disposed within a processing chamber. A first precursor-containing gas mixture is provided into the processing chamber. The first precursor-containing gas mixture includes a boron-containing precursor and a carrier gas selected from the group consisting of argon, nitrogen, and helium. A second precursor-containing gas mixture is provided into the processing chamber.

## Claims

### Claim 1

A method of depositing a dielectric film in a processing chamber, the method comprising:
disposing a substrate on a susceptor disposed within a processing chamber;
providing a first precursor-containing gas mixture into the processing chamber, wherein the first precursor-containing gas mixture comprises:
a boron-containing precursor; and
a carrier gas selected from the group consisting of argon, nitrogen, and helium;
providing a second precursor-containing gas mixture into the processing chamber.

### Claim 2 (depends on 1)

The method of claim 1, wherein the boron-containing precursor comprises tris(dimethylamino)borane (TDMAB), tris(ethylmethylamino)borane (TEMAB), trimethyl borate, triethyl borate, triisopropyl borate, diborane, borazine, triethylborane, trimethylborane, borane dimethylamine, borane diethylamine, borane trimethylamine, borane triethylamine, borane ammonia, boron trichloride, boron tribromide, boron trifluoride, or a combination thereof.

### Claim 3 (depends on 2)

The method of claim 2, wherein the boron-containing precursor comprises trimethyl borate, trimethylborane, or diborane.

### Claim 4 (depends on 1)

The method of claim 1, wherein the second precursor-containing gas mixture comprises a silicon-containing precursor gas.

### Claim 5 (depends on 4)

The method of claim 4, wherein the silicon-containing precursor gas is represented by formula (I):
wherein each R1-R4 is independently hydrogen, substituted C1-C10 alkyl, unsubstituted C1-C10 alkyl, substituted C1-C10 alkylene, unsubstituted C1-C10 alkylene, substituted C1-C10 alkynylene, unsubstituted C1-C10 alkynylene, substituted C1-C10 alkyoxy, unsubstituted C1-C10 alkyoxy, substituted C1-C10 alkylamine, unsubstituted C1-C10 alkylamine, halide, substituted C1-C10 alkyloxyamine, unsubstituted C1-C10 alkyloxyamine, substituted C1-C10 alkyl sulfonamide, or unsubstituted C1-C10 alkyl sulfonamide.

### Claim 6 (depends on 5)

The method of claim 5, wherein each of R1-R4 is independently methyl, methoxy, ethyl, ethoxy, isopropyl, isoproproxy, or tert-butyl.

### Claim 7 (depends on 4)

The method of claim 4, wherein the silicon-containing precursor gas is represented by formula (II):
wherein M is carbon or oxygen;
n is an integer of 1 to 5; and
each R1-R6 is independently hydrogen, substituted C1-C10 alkyl, unsubstituted C1-C10 alkyl, substituted C1-C10 alkylene, unsubstituted C1-C10 alkylene, substituted C1-C10 alkynylene, unsubstituted C1-C10 alkynylene, substituted C1-C10 alkyoxy, unsubstituted C1-C10 alkyoxy, substituted C1-C10 alkylamine, unsubstituted C1-C10 alkylamine, halide, substituted C1-C10 alkyloxyamine, unsubstituted C1-C10 alkyloxyamine, substituted C1-C10 alkyl sulfonamide, or unsubstituted C1-C10 alkyl sulfonamide.

### Claim 8 (depends on 7)

The method of claim 7, wherein each of R1-R6 is independently substituted C1-C10 alkylamine or unsubstituted C1-C10 alkylamine.

### Claim 9 (depends on 1)

The method of claim 1, wherein a first flow rate of the first precursor-containing gas mixture is about 50 sccm to about 10,000 sccm.

### Claim 10 (depends on 9)

The method of claim 9, wherein a second flow rate of the second precursor-containing gas mixture may be between about 50 sccm to about 10,000 sccm.

### Claim 11 (depends on 10)

The method of claim 10, wherein a ratio of the first flow rate to the second flow rate is about 1:1 to about 1:30 of the first flow rate to the second flow rate.

### Claim 12 (depends on 1)

The method of claim 1, wherein providing the first precursor-containing gas mixture into the processing chamber comprises:
performing a first purge process;
introducing a first co-reactant to the processing chamber; and
performing a second purge process.

### Claim 13 (depends on 12)

The method of claim 12, wherein the first co-reactant comprises water, ammonia, primary alcohols, secondary alcohols, carboxylic acids, aldehydes, hydrazines, or alkyl amines.

### Claim 14 (depends on 12)

The method of claim 12, wherein providing the second precursor-containing gas mixture into the processing chamber comprises:
performing a third purge process;
introducing a second co-reactant to the processing chamber; and
performing a second purge process.

### Claim 15 (depends on 14)

The method of claim 14, wherein the second co-reactant comprises water, ammonia, primary alcohols, secondary alcohols, carboxylic acids, aldehydes, hydrazines, alkyl amines, or a combination thereof.

### Claim 16

A method of depositing a dielectric film in a processing chamber, the method comprising:
disposing a substrate on a susceptor disposed within a processing chamber; and
providing a first precursor-containing gas mixture and a second precursor-containing gas mixture into the processing chamber in the presence of a plasma, wherein the first precursor-containing gas mixture comprises a boron-containing precursor and the second precursor-containing gas mixture comprises a silicon-containing precursor gas.

### Claim 17 (depends on 16)

The method of claim 16, wherein the plasma is a non-oxidizing plasma selected from the group consisting of an argon-based plasma, a nitrogen-based plasma, a helium-based plasma, an ammonium-based plasma, and a hydrogen-based plasma.

### Claim 18 (depends on 16)

The method of claim 16, wherein providing the first precursor-containing gas mixture the second precursor-containing gas mixture comprises providing the first precursor-containing gas mixture at a first flow rate and the second precursor-containing gas mixture at a second flow rate, wherein a ratio of the first flow rate to the second flow rate is about 1:1 to about 1:30.

### Claim 19

A method of depositing a dielectric film in a processing chamber, the method comprising:
disposing a substrate on a susceptor disposed within a processing chamber;
providing a first precursor-containing gas mixture into the processing chamber at a first flow rate, wherein the first precursor-containing gas mixture comprises:
trimethyl borate, trimethylborane, or diborane; and
a carrier gas selected from the group consisting of argon, nitrogen, and helium; and
providing a second precursor-containing gas mixture into the processing chamber at a second flow rate, wherein a ratio of the first flow rate to the second flow rate is about 1:1 to about 1:30.

### Claim 20 (depends on 19)

The method of claim 19, wherein the second precursor-containing gas mixture comprises a silicon-containing precursor gas.