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US 2026/0107709 A1Published application
Semiconductor device package thermal conduit
AssigneeTexas Instruments Incorporated
InventorsArchana Venugopal, Benjamin Stassen Cook, Luigi Colombo, Robert Reid Doering
Life of this patent
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Abstract
A method comprises: covering at least part of the integrated circuit with a material, the material including an opening that penetrates through the material; and forming a layer of nanoparticles on at least part of an internal wall of the opening and over at least part of the integrated circuit.
Claims19
A method comprising:
- covering at least part of the integrated circuit with a material, the material including an opening that penetrates through the material;
- and
- forming a layer of nanoparticles on at least part of an internal wall of the opening and over at least part of the integrated circuit.
A method comprising:
- forming an integrated circuit including:
- forming a substrate that includes a first surface and a second surface opposite the first surface;
- and
- forming an interconnect structure on the first surface of the substrate;
- forming a layer of nanoparticles on the integrated circuit, the layer of nanoparticles including a bottom portion and two protruding top portions on two sides of the bottom portion, in which the bottom portion is conformal to and in direct contact with the interconnect structure or the second surface and is between the integrated circuit and the two protruding top portions;.
2 more elements
Dependencies are inferred from the claim text.