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US 2026/0107706 A1Published application
Method for semiconductor manufacturing
AssigneeTokyo Electron Limited
InventorsTek Po Rinus Lee, Kenichi Imakita
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Abstract
A method for semiconductor manufacturing includes providing a substrate into a plasma processing chamber, forming a ruthenium layer over the substrate with a physical vapor deposition using a sputtering gas including krypton or xenon, and forming a ruthenium feature from the ruthenium layer with a subtractive process. The physical vapor deposition is performed at a substrate temperature of less than 100° C.
Claims21
A method for semiconductor manufacturing, the method comprising:
- providing a substrate into a plasma processing chamber;
- forming a ruthenium layer over the substrate with a physical vapor deposition using a sputtering gas comprising krypton or xenon, the physical vapor deposition being performed at a substrate temperature of less than 100° C.;
- heat-treating the ruthenium layer at a temperature up to 400° C. with an anneal performed with a gas;
- and
- forming a ruthenium metal line from the ruthenium layer with a subtractive process.
2 more elements
(canceled)
A method for metal deposition, the method comprising:
- providing a substrate into a physical vapor deposition (PVD) processing chamber, the PVD processing chamber comprising a substrate holder for supporting the substrate and multiple sputtering targets comprising ruthenium metal, the multiple sputtering targets being at oblique angles to a top surface of the substrate;
- sputtering a ruthenium metal layer onto the substrate with a plasma excitation of a noble gas comprising krypton or xenon at a first substrate temperature of less than 100° C.;
- heat-treating the ruthenium metal layer at a second substrate temperature of 400° C. or less with a heater in the substrate holder;
- and
- forming a ruthenium metal line from the ruthenium metal layer with a subtractive process, the ruthenium metal line being part of an interconnect layer.
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A method for forming an interconnect layer, the method comprising:
- providing a substrate onto a substrate holder of a plasma sputtering chamber, the substrate having a top surface comprising a dielectric layer;
- sputtering a ruthenium metal layer onto the dielectric layer using a plasma excitation of a noble gas comprising krypton, xenon, or radon, the dielectric layer having a temperature of less than 100° C.;
- heating the ruthenium metal layer to a temperature of 400° C. or less;
- and
- forming a ruthenium line from the ruthenium metal layer as part of the interconnect layer, the ruthenium line having a width of 10 nm or less.
2 more elements
Dependencies are inferred from the claim text.