# US 2026/0107705 A1 · High throughput conformal thin film deposition method with low precursor consumption

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- Number: US 2026/0107705 A1
- Document ID: US20260107705A1
- Status: Published application
- Kind: A1
- Application number: 19/358,156
- Filed: 2025-10-14
- Published: 2026-04-16
- Earliest claimed: 2024-10-16
- Assignees: Eugenus, Inc.
- Applicants: Eugenus, Inc.
- Inventors: Sang-Hyeob Lee; Sung-Hoon Jung; Jun Jin Hyon; Sung Han Lee
- Web page: https://patentgrep.com/patent/US20260107705A1

## CPC

- H10P 14/412: {Deposition of metallic or metal-silicide materials}
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- C23C 16/00: Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes (reactive sputtering or vacuum evaporation C23C14/00)
- C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating}
- C23C 16/0281: {of metallic sub-layers (C23C16/029 takes precedence)}
- C23C 16/04: Coating on selected surface areas, e.g. using masks
- C23C 16/045: {Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates}
- C23C 16/08: from metal halides
- C23C 16/14: Deposition of only one other metal element
- C23C 16/34: Nitrides {(C23C16/303 takes precedence)}
- C23C 16/45523: {Pulsed gas flow or change of composition over time}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45527: {characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- C23C 16/45557: {Pulsed pressure or control pressure}
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C23C 16/45574: {Nozzles for more than one gas}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- H10P 14/432: {using selective deposition}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The disclosed technology generally relates to forming thin films, and more particularly to high quality, conformal thin films using relatively low amounts of precursor gas, and methods of forming the same. In one aspect, a method of forming a thin film comprises exposing the substrate to one or more vapor deposition cycles in a reaction chamber, wherein exposing the substrate to each vapor deposition cycle comprises exposing the substrate to a first precursor and a second precursor, wherein exposing the substrate to the first precursor and the second precursor is carried out without evacuating to remove a substantial amount of either of the first precursor or the second precursor during and between exposing the substrate to the first precursor and exposing the substrate the second precursor.

## Claims

### Claim 1

A method of forming a thin film, the method comprising:
forming a thin film on a substrate by exposing the substrate to one or more vapor deposition cycles in a reaction chamber, wherein exposing the substrate to each vapor deposition cycle comprises:
exposing the substrate to a first precursor, followed by exposing the substrate to a second precursor,
wherein exposing the substrate to the first precursor and the second precursor is carried out without evacuating the reaction chamber to remove a substantial amount of either of the first precursor or the second precursor during and between exposing the substrate to the first precursor and exposing the substrate to the second precursor.

### Claim 2 (depends on 1)

The method of claim 1, wherein exposing the substrate to the first precursor comprises flowing the first precursor into the reaction chamber and exposing the substrate to the second precursor comprises flowing the second precursor into the reaction chamber, wherein flowing the first precursor and flowing the second precursor do not temporally overlap with each other.

### Claim 3 (depends on 1)

The method of claim 1, wherein exposing the substrate to the first precursor is followed by exposing the substrate to the second precursor without an intervening exposure to any precursor.

### Claim 4 (depends on 1)

The method of claim 1, wherein exposing the substrate to each of the first precursor and the second precursor without evacuating includes not subjecting the reaction chamber to any substantial pumping.

### Claim 5 (depends on 1)

The method of claim 1, wherein one or both of exposing the substrate to the first precursor and exposing the substrate to the second precursor is followed by waiting for a respective time period of about 1 second to about 1 hour without introducing any precursor into the reaction chamber and without evacuating to remove a substantial amount of either of the first precursor or the second precursor.

### Claim 6 (depends on 5)

The method of claim 5, wherein exposing the substrate to the first precursor is followed by waiting for a first time period of about 3 seconds to about 600 seconds before exposing the substrate to the second precursor.

### Claim 7 (depends on 5)

The method of claim 5, wherein exposing the substrate to the second precursor is followed by waiting for a second time period of about 3 seconds to about 600 seconds.

### Claim 8 (depends on 1)

The method of claim 1, wherein each vapor deposition cycle further comprises evacuating the reaction chamber after exposing the substrate to the second precursor.

### Claim 9 (depends on 1)

The method of claim 1, wherein the reaction chamber comprises a gate valve configured to gate a vacuum pump of the reaction chamber, wherein the gate valve remains closed during and between exposing the substrate to the first precursor and exposing the substrate to the second precursor.

### Claim 10 (depends on 1)

The method of claim 1, wherein a ratio of a second volume of the second precursor introduced into the reaction chamber to a first volume of the first precursor introduced into the reaction chamber during each vapor deposition cycle is greater than 3.

### Claim 11 (depends on 1)

The method of claim 1, wherein a growth rate per vapor deposition cycle of the thin film is at least about 0.3 Å/cycle.

### Claim 12 (depends on 1)

The method of claim 1, wherein a total volume of the first precursor used for forming a thickness of the thin film is less than 10% of a volume of the first precursor used for forming a same thickness of a reference thin film having substantially the same composition as the thin film using a reference process with the same deposition conditions as forming the thin film except that the reference process evacuates the reaction chamber to remove a substantial amount of either or both of the first precursor or the second precursor during or between exposing the substrate to the first precursor and exposing the substrate to the second precursor.

### Claim 13 (depends on 1)

The method of claim 1, wherein one or both of exposing the substrate to the first precursor and exposing the substrate to the second precursor includes flowing an inert gas into the reaction chamber along with a respective one of the first and second precursors.

### Claim at position 14

-34. (canceled)

### Claim 35

A method of forming a thin film, the method comprising:
forming a thin film on a substrate by exposing the substrate to one or more vapor deposition cycles in a reaction chamber, wherein exposing the substrate to each vapor deposition cycle comprises:
exposing the substrate to a first precursor, followed by exposing the substrate to a second precursor,
wherein exposing the substrate to the first precursor and the second precursor is carried out without evacuating the reaction chamber to remove a substantial amount of either of the first precursor or the second precursor during exposing the substrate to the first precursor and the second precursor, and
wherein after exposing the substrate to one or both of the first precursor and the second precursor without evacuating the reaction chamber, evacuating the reaction chamber to substantially remove a respective one or both of the first precursor and the second precursor.

### Claim 36 (depends on 35)

The method of claim 35, wherein one or both of exposing the substrate to the first precursor and exposing the substrate to the second precursor is followed by waiting for a respective time period of about 1 second to about 1 hour without introducing any precursor into the reaction chamber and without evacuating to remove a substantial amount of either of the first precursor or the second precursor.

### Claim 37 (depends on 36)

The method of claim 36, wherein exposing the substrate to the first precursor is followed by waiting for a first time period of about 3 seconds to about 600 seconds before exposing the substrate to the second precursor.

### Claim 38 (depends on 36)

The method of claim 36, wherein exposing the substrate to the second precursor is followed by waiting for a second time period of about 3 seconds to about 600 seconds.

### Claim 39 (depends on 35)

The method of claim 35, wherein after exposing the substrate to each of the first precursor and the second precursor without evacuating the reaction chamber, evacuating the reaction chamber to substantially remove a respective one of the first precursor and the second precursor.

### Claim 40 (depends on 35)

The method of claim 35, wherein the reaction chamber comprises a gate valve configured to gate a vacuum pump of the reaction chamber, wherein the gate valve remains closed during exposing the substrate to each of the first precursor and the second precursor.

### Claim 41 (depends on 35)

The method of claim 35, wherein a ratio of a second volume of the second precursor introduced into the reaction chamber to a first volume of the first precursor introduced into the reaction chamber during each vapor deposition cycle is greater than 3.

### Claim 42 (depends on 35)

The method of claim 35, wherein one or both of exposing the substrate to the first precursor and exposing the substrate to the second precursor includes flowing an inert gas into the reaction chamber along with a respective one of one of the first and second precursors.