Controlling auto-doping in epitaxially grown silicon-containing materials
AssigneeApplied Materials, Inc.
InventorsArvind Kumar, Arkka Bhattacharyya, Zuoming Zhu, Abhishek Dube
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Abstract
Exemplary semiconductor processing methods may include forming a barrier layer on a first source/drain material disposed on a substrate housed within a processing region of a semiconductor processing chamber. The first source/drain material may be doped with a dopant. The methods may include growing an epitaxial silicon-containing material on the barrier layer. The barrier layer may reduce an amount of diffusion of the dopant from the first source/drain material into the epitaxial silicon-containing material.
Claims20
A semiconductor processing method comprising:
- forming a barrier layer on a first source/drain material disposed on a substrate housed within a processing region of a semiconductor processing chamber, wherein the first source/drain material is doped with a dopant;
- and
- growing an epitaxial silicon-containing material on the barrier layer, wherein the barrier layer reduces an amount of diffusion of the dopant from the first source/drain material into the epitaxial silicon-containing material.
A semiconductor processing method comprising:
- forming a first source/drain material on a substrate in a processing region of a semiconductor processing chamber, wherein the first source/drain material is doped with a dopant;
- and
- growing an epitaxial silicon-containing material on the first source/drain material, wherein the epitaxial silicon-containing material is formed at a temperature of less than or about 600 ° C.
A semiconductor processing method comprising:
- forming a first source/drain material on a substrate in a processing region of a semiconductor processing chamber, wherein the first source/drain material is doped with a Group V element;
- performing a clean to remove residual Group V element from the processing region;
- forming a barrier layer on the first source/drain material, wherein the barrier layer is formed at a first temperature of less than or about 600 ° C.;
- and
- growing an epitaxial silicon-containing material on the barrier layer, wherein the barrier layer controls an amount of diffusion of the Group V element from the first source/drain material into the epitaxial silicon-containing material.
Dependencies are inferred from the claim text.