Integrated circuit device

An IC device, comprising:

• a transistor disposed over a substrate, the transistor comprising a gate structure and source/drain regions at opposite sides of the gate structure;
• a conductive contact plug disposed on one of the gate structure and the source/drain regions;
• and
• a conductive structure electrically coupled to the conductive contact plug, the conductive structure comprising a transition metal dichalcogenide liner and a metal structure lined by the transition metal dichalcogenide liner, wherein the metal structure has an upper sidewall and a lower sidewall laterally offset from the upper sidewall, wherein both of the upper sidewall and the lower sidewall of the metal structure are lined by the transition metal dichalcogenide liner.

An IC device, comprising:

• a transistor disposed over a substrate, the transistor comprising a gate structure and source/drain regions at opposite sides of the gate structure;
• a conductive contact plug vertically overlapping one of the gate structure and the source/drain regions;
• an interlayer dielectric (ILD) layer disposed over the conductive contact plug;
• and
• a conductive structure embedded in the ILD layer, the conductive structure comprising a metal structure and a transition metal dichalcogenide layer around the metal structure, wherein the transition metal dichalcogenide layer and the ILD layer form a first interface having a stepped profile.