Thermistor, bolometer, and image sensor

A thermistor according to any of the preceding claims, wherein the first and second colloidal quantum dots are made of the same material.

A thermistor according to any of the preceding claims wherein the first colloidal quantum dots differ in size and/or bandgap than the second colloidal quantum dots.

A thermistor according to any of the preceding claims, wherein the at least one first layer (4a) comprises a first ligand material attached to the first colloidal quantum dots, and the at least one second layer (4b) comprises a second ligand material which is attached the second colloidal quantum dots and is different from the first ligand material.

A thermistor according to any of the preceding claims wherein the at least one first layer (4a) and the at least one second layer (4b) exhibit with respect to each other any of a different doping, a different Fermi level or a band offset.

A thermistor according to any of the preceding claims, the at least one first layer (4a) and the at least one second layer (4b) are arranged alternately in the layered structure (4) such that each of the at least one first layer (4a) contacts a corresponding one of the at least one second layer (4b), more preferably the at least the at least one first layer (4a) and the at least one second layer (4b) being configured to form at least one potential barrier structure

A thermistor according to any of the preceding claims, wherein the at least one first layer (4a) and/or the at least one second layer (4b) are a respective semiconductive colloidal quantum dot solid, preferably said respective semiconductive colloidal quantum dot solid having a majority carrier concentration of 1018 cm−3 or more at a temperature of 300 K, more preferably the majority carrier concentration being 1019 cm−3 or more at a temperature of 300 K.

A thermistor according to any of the preceding claims, wherein the layered structure (4) at a temperature of 300 K and under the application of a voltage of between 0.1 and 1V between the two electrodes (2, 3) is configured to have a negative temperature coefficient of resistance, TCR, the absolute value of which is equal to or more than 1%/K, preferably equal to or more than 3%/K, more preferably equal to or more than 5%/K.

A bolometer comprising a thermistor according to any of the previous claims.

A bolometer according to any of claim 10-14, further comprising a substrate (7) which comprises an air bridge (12) which supports the thermistor which is at the air bridge (12).