Euv light generation apparatus and electronic device manufacturing method

An electronic device manufacturing method, comprising:

• outputting EUV light generated by an EUV light generation apparatus to an exposure apparatus;
• and
• exposing a photosensitive substrate to the EUV light in the exposure apparatus to manufacture an electronic device,
• the EUV light generation apparatus including:
• a chamber in which a target supplied to a plasma generation region inside thereof is irradiated with laser light to generate the EUV light;
• a light concentrating mirror arranged in the chamber and configured to reflect the EUV light toward an external apparatus;
• a differential exhaust chamber arranged on an optical path of the EUV light reflected by the light concentrating mirror;
• a gas supply port through which a gas is supplied to a space between the differential exhaust chamber and the light concentrating mirror;
• a first partition wall arranged between the plasma generation region and the light concentrating mirror, the first partition wall being provided with a gas inlet port through which the gas supplied through the gas supply port flows into a side of the plasma generation region from a side of the light concentrating mirror and through which the EUV light traveling from the plasma generation region toward the light concentrating mirror passes;
• a gas main exhaust port through which the gas flowing into the plasma generation region side from the light concentrating mirror side via the gas inlet port is exhausted;
• and
• a constriction member arranged between the gas supply port and the light concentrating mirror and configured to allow the EUV light reflected by the light concentrating mirror to pass therethrough and constrict a gas flow from the gas supply port toward the gas inlet port.

An electronic device manufacturing method, comprising:

• inspecting a defect of a mask by irradiating the mask with EUV light generated by an EUV light generation apparatus;
• selecting a mask using a result of the inspection;
• and
• exposing and transferring a pattern formed on the selected mask onto a photosensitive substrate,
• the EUV light generation apparatus including:
• a chamber in which a target supplied to a plasma generation region inside thereof is irradiated with laser light to generate the EUV light;
• a light concentrating mirror arranged in the chamber and configured to reflect the EUV light toward an external apparatus;
• a differential exhaust chamber arranged on an optical path of the EUV light reflected by the light concentrating mirror;
• a gas supply port through which a gas is supplied to a space between the differential exhaust chamber and the light concentrating mirror;
• a first partition wall arranged between the plasma generation region and the light concentrating mirror, the first partition wall being provided with a gas inlet port through which the gas supplied through the gas supply port flows into a side of the plasma generation region from a side of the light concentrating mirror and through which the EUV light traveling from the plasma generation region toward the light concentrating mirror passes;
• a gas main exhaust port through which the gas flowing into the plasma generation region side from the light concentrating mirror side via the gas inlet port is exhausted;
• and
• a constriction member arranged between the gas supply port and the light concentrating mirror and configured to allow the EUV light reflected by the light concentrating mirror to pass therethrough and constrict a gas flow from the gas supply port toward the gas inlet port.