Semiconductor devices using complementary field effect transistors (cfets)
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSheng-Po Huang, Perng-Fei Yuh
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSheng-Po Huang, Perng-Fei Yuh
Estimating the term…
Semiconductor devices using complementary field effect transistors are provided. A semiconductor device includes a first complementary field effect transistor (CFET) pair. The first CFET pair includes a first n-type transistor having a first gate electrode coupled with a first input of a differential pair. The first CFET pair includes a first p-type transistor having a second gate electrode coupled with the first input of the differential pair. The semiconductor device includes second CFET pair. The second CFET pair includes a second n-type transistor having a third gate electrode coupled with a second input of the differential pair. The second CFET pair includes a second p-type transistor having a fourth gate electrode coupled with the first input of the differential pair.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.