Light-emitting diode and light-emitting device

A semiconductor laser element, comprising:

• a substrate, having a first surface, a first side surface, and a second side surface located on opposite sides of the substrate, the first side surface and the second side surface extending along a first direction;
• and
• a semiconductor stack, formed on the first surface of the substrate, comprising a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked, wherein a ridge is formed on a surface of the second semiconductor layer, the ridge has an upper surface and a side surface adjacent to the upper surface, and the ridge extends along the first direction;
• wherein the semiconductor stack further comprises a first mesa connected to the side surface of the ridge and a second mesa adjacent to the first side surface or the second side surface of the substrate, the first mesa exposes a portion of a surface of the second semiconductor layer, and the second mesa exposes a portion of a surface of the first semiconductor layer;
• and
• wherein the semiconductor stack further comprises a connection surface exposing another portion of the surface of the first semiconductor layer, a first segment sidewall, and a second segment sidewall, the first segment sidewall is located between the first mesa and the connection surface, the second segment sidewall is located between the second mesa and the connection surface, an angle between the first segment sidewall and the connection surface is a first angle α1, an angle between the second segment sidewall and the second mesa is a second angle α2, and the first angle α1 is different from the second angle α2.

A semiconductor laser element, comprising:

• a substrate, having a first surface, a first side surface, and a second side surface located on opposite sides of the substrate, the first side surface and the second side surface extending along a first direction;
• and
• a semiconductor stack, formed on the first surface of the substrate, comprising a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked, wherein a ridge is formed on a surface of the second semiconductor layer, the ridge has an upper surface and a side surface adjacent to the upper surface, and the ridge extends along the first direction;
• wherein the semiconductor stack comprises a first mesa connected to the side surface of the ridge and a second mesa adjacent to the first side surface or the second side surface of the substrate, the first mesa exposes a portion of a surface of the second semiconductor layer, and the second mesa exposes a portion of a surface of the first semiconductor layer;
• and
• wherein the semiconductor stack further comprises a first segment sidewall and a second segment sidewall, the first segment sidewall is connected to the first mesa, the second segment sidewall is connected to the second mesa, and a slope of the first segment sidewall is different from a slope of the second segment sidewall.