Substrate processing method, substrate processing apparatus, and storage medium
AssigneeTokyo Electron Limited
InventorArnaud Alain Jean DAUENDORFFER
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AssigneeTokyo Electron Limited
InventorArnaud Alain Jean DAUENDORFFER
Estimating the term…
A substrate processing method of forming a pattern by supplying a developing fluid that is gas or mist to a substrate and developing a resist film formed on the substrate and containing metal, the substrate processing method including: a first heat processing step of performing heat processing on the substrate after the resist film is exposed along the pattern, a first developing step of supplying the developing fluid to the substrate on which the first heat processing step is performed and removing a part of the resist film in a depth direction, and a second developing step of supplying the developing fluid to the substrate on which the first developing step is performed for forming the pattern and removing a region from which the resist film is removed in the first developing step in the depth direction to a development completion position.
A substrate processing method of forming a pattern by supplying a developing fluid that is gas or mist to a substrate and developing a resist film formed on the substrate and containing metal, the substrate processing method comprising:
A substrate processing apparatus configured to form a pattern by supplying a developing fluid that is gas or mist to a substrate and developing a resist film formed on the substrate and containing metal, the substrate processing apparatus comprising:
Dependencies are inferred from the claim text.