Photolithography method and apparatus
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShinn-Sheng YU, Ru-Gun LIU, Hsu-Ting HUANG, Chin-Hsiang LIN
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Abstract
An extreme ultraviolet lithography (EUVL) method includes providing at least two phase-shifting mask areas having a same pattern. A resist layer is formed over a substrate. An optimum exposure dose of the resist layer is determined, and a latent image is formed on a same area of the resist layer by a multiple exposure process. The multiple exposure process includes a plurality of exposure processes and each of the plurality of exposure processes uses a different phase-shifting mask area from the at least two phase-shifting mask areas having a same pattern.
Claims20
A method comprising:
- providing a first phase-shifting mask area;
- providing a second phase-shifting mask area having a same pattern as the first phase-shifting mask area;
- forming a resist layer over a substrate;
- determining an optimum exposure dose for the resist layer;
- and
- exposing a same area of the resist layer using at least the first phase-shifting mask area with a first exposure dose and to the second phase-shifting mask area with a second exposure dose,
- wherein the first exposure dose and the second exposure dose are both less than the optimum exposure dose.
A method of manufacturing a semiconductor device, comprising:
- forming a resist layer over a substrate;
- forming a latent image on a same area of the resist layer by a plurality of exposure processes,
- wherein each of the plurality of exposure processes uses a different phase-shifting mask having a same pattern;
- and
- developing the latent image to form a pattern in the resist layer exposing a portion of the substrate.
A method of manufacturing a semiconductor device, comprising:
- forming a resist layer over a substrate;
- selectively exposing the resist layer with extreme ultraviolet radiation using at least two phase-shifting masks to expose a same area of the resist layer to at least two consecutive exposures of extreme ultraviolet radiation using a first one of the at least two phase-shifting masks and then a second one of the at least two phase-shifting masks;
- and
- developing the selectively exposed resist layer to form a pattern in the resist layer exposing a portion of the substrate,
- wherein each of the at least two phase-shifting masks has a same mask pattern, and
- each exposures dose of extreme ultraviolet radiation applied to the resist layer is less than an optimum exposure dose for forming the pattern in the resist layer.
Dependencies are inferred from the claim text.